NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp
Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -60 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current DC Current Gain Current-Gain Bandwidth Product Output Capacitance Noise Figure Power Gain AGC Current Symbol ICBO hFE fT Cob NF PG IAGC Test Conditions VCB = 20V, IE = 0 VCE = 10V, IC = 2mA VCE = 10V, IE = -2mA VCB = 10V, IE = 0, f = 1MHz IE = -2mA, f = 200MHz IE = -2mA, f = 200MHz PG = -30dB Min - 20 400 - - 20 - Typ - 60 530 0.5 2.5 23 -9 Max 0.2 200 - 1.0 3.3 - -11 MHz pF dB dB mA Unit A
.157 (4.0)
Base
Emitter
Collector
.026 (0.66) .079 (2.02) Max .008 (0.20)
.150 (3.81) Dia Max
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